Magnachip expands seventh-generation MXT LV MOSFET line-up for battery protection circuits

Magnachip Semiconductor Corporation has released four new MXT LV (magnachip eXtreme trench low voltage) metal-oxide-semiconductor field-effect transistors (MOSFETs), using super-short channel technology. This will enable Magnachip to further expand its seventh-generation MXT LV MOSFET line-up for battery protection circuits of mobile devices.

Super-Short Channel is Magnachip’s design technology to reduce R_on (the resistance of MOSFETs during on-state operation) by shortening the channel length between the source and the drain. The R_on of these new MOSFETs has been reduced by 24~40%, compared to previous generations, and as a result, the battery performance is improved with low power losses when a battery is charging or discharging.

In addition, Magnachip provides customised design service for these products, based on the application specifications and battery capacities, so the sizes of the MOSFETs can be reduced by 5 to 20% respectively.

With these technical capabilities, flexible design and compact size options, the extended MXT LV MOSFET line-up satisfies the various technical requirements of a wide range of mobile devices, from foldable phones to wireless earphones.

“Magnachip has released five new MXT LV MOSFETs for battery protection circuits so far this year,” says YJ Kim, CEO of Magnachip. “We will continue to create premium MOSFETs that offer great power efficiency and outstanding performance for mobile devices to solidify our presence in the market.”

Product features

• Seventh-generation silicon trench technology
• Reduced R_on by approximately 24%~40% compared to the previous generations
• Enhanced switching speed through low total gate charge
• Solutions for a wide range of mobile devices

Family of Seventh-generation MXT LV MOSFETs

Comment on this article below or via Twitter: @IoTNow_OR @jcIoTnow